Er- and Eu-doped GaP-oxide porous composites for optoelectronic applications
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منابع مشابه
Semiconductor-oxide Nanocomposites Based on Porous Semiconductors
Rare-earth containing oxide nanocomposites are prepared of porous GaP and GaAs templates in a controlled fashion. The initial porous GaP and GaAs networks are replaced by GaPO4 and Ga2O3 structures, respectively, during annealing at temperatures from 500 to 900 C. The impregnation of Eu and Er lanthanides from EuCl3:C2H5OH and ErCl3:C2H5OH solutions results in the formation of lanthanide contai...
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Rare-earth-containing oxide nanocomposites are prepared in a controlled fashion from porous GaAs templates. The initial porous GaAs network is replaced by a β-Ga2O3 one during annealing at temperatures from 500 to 900 ◦C. The impregnation of Eu and Er lanthanides from EuCl3:C2H5OH and ErCl3:C2H5OH solutions results in the formation of xenotime EuAsO4 and ErAsO4 microcrystals finely dispersed in...
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تاریخ انتشار 2006